Customization: | Available |
---|---|
Type: | Special Shaped Products |
Materials Abraded: | Nonferrous Metal |
Still deciding? Get samples of $ !
Request Sample
|
Suppliers with verified business licenses
Audited by an independent third-party inspection agency
CMP Polishing Slurry for Sapphire Polishing
1. Appearance:
White water base suspension
2. Application:
Polishing semiconductor wafers, precision ceramic, metal and other materials.
3. Specification:
Size (micron) |
0.30,0.20,0.15,0.10 |
|
PH |
11-13 |
3.5-4.5 |
Content % |
19-22 |
29-31 |
Suspensibility |
good |
good |
4. Characteristics:
(1) High purity alumina particles dispersed in deionized water medium
(2) Higher hardness makes it have good grinding performances than silica polishing slurry, not only can achieve higher grinding effect, but also can get better surface roughness.
5. Package:
500g/bottle; 5kg/barrel
Typical Properties | ||||||
Alkaline Type pH: 9.8±0.5 |
SOQ-2 | SOQ-4 | SOQ-6 | SOQ-8 | SOQ-10 | SOQ-12 |
Acidic Type pH: 2.8±0.5 |
ASOQ-2 | ASOQ-4 | ASOQ-6 | ASOQ-8 | ASOQ-10 | ASOQ-12 |
Grit Size(nm) | 10~30 | 30~50 | 50~70 | 70~90 | 90~110 | 110~130 |
Appearance | Milk white or semitransparent liquid | |||||
Density (g/ml) | 1. 15±0.05 |
Component | Content(wt%) |
SiO2 | 15~30 |
Na2O | ≤0.3 |
Heavy metal impurity | ≤50 ppb |
Silica Wafer Polishing Reference Data | |
Polishing Pressure | 150 ~ 250 g/cm2 |
Polishing Temperature | 32 ~ 40 °C (89 ~ 104 °F) |
Dilution | 1:1 - 20 |
Polishing duration | 3 ~ 6 minutes |